NV6144C
650V, 35mOhm GaN FET in a DFN8x8 package.
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Product Description
The NV6144C, manufactured by GeneSiC Semiconductor, represents a significant advancement in power electronics. This 650V, 35mOhm GaN FET is specifically optimized for high-frequency, high-efficiency power conversion. Its GaN-on-Si technology enables faster switching speeds and reduced power losses compared to traditional silicon MOSFETs. The device is packaged in a space-saving DFN8x8, making it suitable for applications with stringent size constraints. Typical applications include power supplies, DC-DC converters, and motor drives. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, ensuring you receive authentic components with full traceability and support. Benefit from the superior performance and reliability of the NV6144C in your next power design.
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Technical Specifications
| Gate charge | 11 nC |
|---|---|
| Package type | DFN8x8 |
| Drain source voltage | 650V |
| Continuous drain current | 20A |
| Drain source on resistance | 35 mOhm |
| Operating temperature range | -55°C to +150°C |
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