NV6136A
650V, 35mOhm GaN FET in a DFN8x8 package
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Product Description
The NV6136A is a high-performance 650V GaN FET from GeneSiC Semiconductor, featuring an ultra-low on-resistance of 35mOhm. This device is engineered for exceptional efficiency and power density in a compact DFN8x8 package. GaN FETs offer significant advantages over traditional silicon MOSFETs, including faster switching speeds, reduced switching losses, and improved thermal performance. The NV6136A is ideal for applications such as power supplies, DC-DC converters, and motor drives. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, guaranteeing the authenticity and quality of this product. Benefit from the advanced capabilities of GaN technology with the NV6136A, designed for demanding power electronics applications. Its robust design and superior performance make it a reliable choice for your next project.
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Technical Specifications
| Gate charge | 11 nC |
|---|---|
| Package type | DFN8x8 |
| Current rating | 25A |
| Voltage rating | 650V |
| Drain source on resistance | 35 mOhm |
| Operating temperature range | -55 to 150 °C |
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