NV6132A
650V GaN FET from GeneSiC Semiconductor. High-speed switching and low on-resistance.
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Product Description
The NV6132A is a 650V GaN (Gallium Nitride) FET manufactured by GeneSiC Semiconductor. This enhancement mode device is optimized for high-speed switching performance, making it suitable for a wide range of power electronics applications. Its low on-resistance (Rds(on)) minimizes conduction losses, contributing to higher system efficiency. The NV6132A simplifies gate drive requirements due to its enhancement mode operation. Typical applications include power supplies, DC-DC converters, inverters, motor drives, and Class-D audio amplifiers. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, guaranteeing the authenticity and quality of this product. Benefit from faster switching speeds and reduced power losses with the NV6132A GaN FET.
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Technical Specifications
| Package type | DFN8x8 |
|---|---|
| Current rating | 15 amperes |
| Gate charge on | 3.5 nanocoulombs |
| Voltage rating | 650 volts |
| Total gate charge | 6.7 nanocoulombs |
| Rise and fall time | 10 nanoseconds |
| Operating temperature | -55 degrees Celsius to +150 degrees Celsius |
| Drain source on resistance | 190 milliohms |
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