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NV6132A
Manufacturer GeneSiC Semiconductor
Short Description 650V GaN FET from GeneSiC Semiconductor. High-speed switching and low on-resistance.
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Package Type
DFN8x8
Current Rating
15 amperes
Gate Charge On
3.5 nanocoulombs
Voltage Rating
650 volts
Total Gate Charge
6.7 nanocoulombs
Rise And Fall Time
10 nanoseconds
Operating Temperature
-55 degrees Celsius to +150 degrees Celsius
Drain Source On Resistance
190 milliohms

Full Description

The NV6132A is a 650V GaN (Gallium Nitride) FET manufactured by GeneSiC Semiconductor. This enhancement mode device is optimized for high-speed switching performance, making it suitable for a wide range of power electronics applications. Its low on-resistance (Rds(on)) minimizes conduction losses, contributing to higher system efficiency. The NV6132A simplifies gate drive requirements due to its enhancement mode operation. Typical applications include power supplies, DC-DC converters, inverters, motor drives, and Class-D audio amplifiers. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, guaranteeing the authenticity and quality of this product. Benefit from faster switching speeds and reduced power losses with the NV6132A GaN FET.

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