NV6128
650V, 150mOhm GaN FET
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Product Description
The GENESIC SEMICONDUCTOR NV6128 is a 650V GaN FET designed for high-efficiency power conversion. Featuring a typical on-resistance of just 150mOhm, the NV6128 minimizes conduction losses and maximizes overall system performance. This GaN_FET is suitable for a wide range of applications, including power supplies, inverters, and motor drives. Its superior switching characteristics enable higher operating frequencies and reduced component size. As an authorized distributor of GENESIC SEMICONDUCTOR, Supreme Components International guarantees the authenticity and quality of the NV6128. Benefit from the advanced capabilities of GaN technology with this reliable and efficient device. Consider the NV6128 for your next power design to achieve optimal performance and efficiency.
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Technical Specifications
| Fall time | 4 nanoseconds |
|---|---|
| Rise time | 11 nanoseconds |
| Identifier | 17A |
| Gate charge | 11.5 nanoCoulombs |
| Package type | DFN8x8 |
| Voltage rating | 650 Volts |
| Drain source on resistance | 150 milliOhms |
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