NV6127C
650V, 35mOhm GaN FET in DFN8x8
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Product Description
The NV6127C, manufactured by GeneSiC Semiconductor, is a high-performance 650V GaN FET (GAN_FET MOSFET) optimized for high-efficiency power conversion applications. Featuring an ultra-low on-resistance of 35mOhm, this device minimizes conduction losses and maximizes overall system efficiency. Its compact DFN8x8 package allows for high power density and ease of integration into various designs. As an authorised distributor of GeneSiC Semiconductor, Supreme Components International guarantees the authenticity and quality of the NV6127C. This GaN FET is suitable for applications such as power supplies, DC-DC converters, and motor drives, where efficiency and size are critical. Benefit from the superior switching performance and reliability of GaN technology with the NV6127C.
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Technical Specifications
| Identifier | 25 A |
|---|---|
| Technology | Gallium Nitride |
| Gate charge | 14 nanocoulombs |
| Package type | DFN8x8 |
| Mounting style | Surface Mount |
| Voltage rating | 650 Volts |
| Drain source on resistance | 35 milliohms |
| Operating temperature range | Negative 55 Degrees Celsius to 150 Degrees Celsius (Junction Temperature) |
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