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NV6127C
Manufacturer GeneSiC Semiconductor
Short Description 650V, 35mOhm GaN FET in DFN8x8
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Identifier
25 A
Technology
Gallium Nitride
Gate Charge
14 nanocoulombs
Package Type
DFN8x8
Mounting Style
Surface Mount
Voltage Rating
650 Volts
Drain Source On Resistance
35 milliohms
Operating Temperature Range
Negative 55 Degrees Celsius to 150 Degrees Celsius (Junction Temperature)

Full Description

The NV6127C, manufactured by GeneSiC Semiconductor, is a high-performance 650V GaN FET (GAN_FET MOSFET) optimized for high-efficiency power conversion applications. Featuring an ultra-low on-resistance of 35mOhm, this device minimizes conduction losses and maximizes overall system efficiency. Its compact DFN8x8 package allows for high power density and ease of integration into various designs. As an authorised distributor of GeneSiC Semiconductor, Supreme Components International guarantees the authenticity and quality of the NV6127C. This GaN FET is suitable for applications such as power supplies, DC-DC converters, and motor drives, where efficiency and size are critical. Benefit from the superior switching performance and reliability of GaN technology with the NV6127C.

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