NV6127
650V GaN FET from GeneSiC Semiconductor
PRODUCT DETAILS
Product Description
The NV6127 is a 650V GaN (Gallium Nitride) FET from GeneSiC Semiconductor, designed for high-efficiency power conversion. This enhancement mode device offers significant advantages over traditional silicon MOSFETs, including faster switching speeds, lower on-resistance, and reduced gate charge. These characteristics contribute to improved power efficiency and reduced system size. As an authorised distributor, Supreme Components International ensures you receive genuine, high-quality components. The NV6127 is suitable for a wide range of applications, including power supplies, solar inverters, motor drives, and other power electronic systems. Its superior performance enables designers to create more compact and efficient power solutions. Explore the benefits of GaN technology with the NV6127.
Product Tags
Technical Specifications
| Package | LGA 8x8 |
|---|---|
| Current rating | 15 amperes |
| Gate charge on | 2.7 nanocoulombs |
| Voltage rating | 650 volts |
| Total gate charge | 6.8 nanocoulombs |
| Rise time fall time | 10 nanoseconds / 15 nanoseconds |
| Operating temperature | -55 to 150 degrees Celsius |
| Drain source on resistance | 170 milliohms |
Ordering Information
| Packaging Type | Tray |
|---|
Ships in:
1 day
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