NV6125C
650V, 35mOhm GaN FET in DFN8x8 package.
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Product Description
The NV6125C is a high-performance 650V GaN FET from GeneSiC Semiconductor, specifically engineered for high-efficiency power conversion applications. Featuring a low on-resistance of 35mOhm, this GAN_FET MOSFET minimizes conduction losses, maximizing overall system efficiency. Its compact DFN8x8 package allows for high power density designs. The NV6125C is ideal for applications such as power supplies, DC-DC converters, and inverters where efficiency and size are critical. As an authorised distributor of GeneSiC Semiconductor, Supreme Components International guarantees the authenticity and quality of this product. Benefit from the superior switching performance and reliability of GaN technology with the NV6125C.
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Technical Specifications
| Identifier | 20A |
|---|---|
| Technology | Gallium Nitride |
| Gate charge | 14 nanoCoulombs |
| Package type | DFN8x8 |
| Mounting style | Surface Mount |
| Voltage rating | 650 Volts |
| Operating temperature | Negative 55 Degrees Celsius to 150 Degrees Celsius (Junction Temperature) |
| Drain source on resistance | 35 milliOhms |
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