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NV6123
Manufacturer GeneSiC Semiconductor
Short Description 650V, 65mOhm GaN FET
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Gatecharge
8.5 nanocoulombs
Packagetype
DFN8x8
Drainsourcevoltage
650 volts
Continuousdraincurrent
25 amperes
Drainsourceonresistance
65 milliohms
Operatingtemperaturerange
Negative 55 degrees Celsius to Positive 150 degrees Celsius

Full Description

The NV6123 is a 650V, 65mOhm GaN FET from GeneSiC Semiconductor, available through Supreme Components International, an authorized distributor of electronic components. This GaN FET leverages the superior material properties of Gallium Nitride to achieve exceptional performance in power electronics applications. Housed in a compact DFN8x8 package, the NV6123 offers high power density and efficiency. Its fast switching speed and low on-resistance minimize switching losses, making it suitable for high-frequency power converters, inverters, and power supplies. The NV6123's robust design ensures reliable operation in demanding environments. Supreme Components International provides full technical support and ensures the authenticity of all GeneSiC Semiconductor products. Explore the benefits of GaN technology with the NV6123 and experience enhanced power conversion efficiency.

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