NV6117
650V, 150mOhm GaN FET
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Product Description
The NV6117, manufactured by GeneSiC Semiconductor, is a high-performance 650V GaN FET featuring a low on-resistance of 150mOhm. This device is designed for high-efficiency power conversion, offering significant advantages over traditional silicon MOSFETs. Its superior switching characteristics and reduced losses make it ideal for applications such as power supplies, inverters, and motor drives. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, ensuring you receive genuine, high-quality components. The NV6117's GaN technology enables higher power density and improved thermal performance. Benefit from faster switching speeds and reduced energy consumption with this advanced GaN FET. Choose Supreme Components International for reliable components and expert support.
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Technical Specifications
| Technology | Gallium Nitride |
|---|---|
| Package type | DFN8x8 |
| Voltage rating | 650V |
| Drain source on resistance | 150 mOhm |
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1 day
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