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NV6115
Manufacturer GeneSiC Semiconductor
Short Description 650V GaN FET, enhancement mode, high-speed switching, low on-resistance.
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Gatecharge
7.5 nanoCoulombs
Packagetype
DFN8x8
Currentrating
12 Amperes
Voltagerating
650 Volts
Drainsourceonresistance
240 milliOhms
Operatingtemperaturerange
Minus 55 Degrees Celsius to Plus 150 Degrees Celsius

Ordering Information

Parameter
Value
Packaging Type
TAPE_AND_REEL

Full Description

The NV6115 is a 650V GaN (Gallium Nitride) FET manufactured by GeneSiC Semiconductor. This enhancement mode device is optimized for high-speed switching performance, making it suitable for a wide range of power electronics applications. Its low on-resistance minimizes conduction losses, leading to increased efficiency in power conversion systems. The NV6115 is designed to offer superior performance compared to traditional silicon MOSFETs, particularly in high-frequency and high-power applications. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, guaranteeing the authenticity and quality of this product. Applications include power supplies, solar inverters, motor drives, and other high-efficiency power conversion systems. Benefit from faster switching speeds and reduced power losses with this advanced GaN FET.

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