Reference Only
NV6113
650V, 35mOhm GaN FET
Manufacturer:
GeneSiC SemiconductorSub Category:
OTHER
Datasheet
NV6113 Datasheet
Product Description
The NV6113, manufactured by GeneSiC Semiconductor, is a high-performance 650V GaN FET (GAN_FET) designed for demanding power applications. Featuring an ultra-low on-resistance of just 35mOhm, this MOSFET enables highly efficient and compact power designs. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, ensuring you receive genuine components with full traceability. The NV6113 is ideal for applications such as power supplies, inverters, and motor drives where high power density and efficiency are critical. Benefit from the superior switching performance and reduced losses offered by GaN technology. Explore the possibilities of advanced power electronics with the NV6113 from GeneSiC Semiconductor, available at Supreme Components International.
Technical Specifications
| Attribute | Description |
|---|---|
| Gate Charge | 6.8 nC |
| Package Type | DFN8x8 |
| Drain Source Voltage | 650V |
| Continuous Drain Current | 20A |
| Drain Source On Resistance | 35 mOhm |
| Operating Temperature Range | -55°C to +150°C |