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NV6113
Manufacturer GeneSiC Semiconductor
Short Description 650V, 35mOhm GaN FET
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Gatecharge
6.8 nC
Packagetype
DFN8x8
Drainsourcevoltage
650V
Continuousdraincurrent
20A
Drainsourceonresistance
35 mOhm
Operatingtemperaturerange
-55°C to +150°C

Full Description

The NV6113, manufactured by GeneSiC Semiconductor, is a high-performance 650V GaN FET (GAN_FET) designed for demanding power applications. Featuring an ultra-low on-resistance of just 35mOhm, this MOSFET enables highly efficient and compact power designs. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, ensuring you receive genuine components with full traceability. The NV6113 is ideal for applications such as power supplies, inverters, and motor drives where high power density and efficiency are critical. Benefit from the superior switching performance and reduced losses offered by GaN technology. Explore the possibilities of advanced power electronics with the NV6113 from GeneSiC Semiconductor, available at Supreme Components International.

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