The MJE801T, manufactured by CENTRAL SEMICONDUCTOR, is a robust NPN Bipolar Junction Transistor (BJT) designed for diverse electronic applications. This transistor boasts a collector-emitter voltage (Vceo) of 60V and a continuous collector current (Ic) of 4A, making it suitable for medium-power switching and amplification circuits. The MJE801T is housed in a TO-220 package, facilitating easy mounting and heat dissipation. Its NPN configuration allows for efficient current flow from collector to emitter when the base is positively biased. Typical applications include power supplies, motor control, and audio amplifiers. As an authorized distributor of CENTRAL SEMICONDUCTOR, Supreme Components International guarantees the authenticity and quality of the MJE801T.
Product Categories
Specifications
| Parameter | Value |
|---|---|
| Package Type | TO-220 |
| Dc Current Gain | 750 to 1800 |
| Transistor Polarity | NPN |
| Transition Frequency | 5 MHz |
| Collector Current Maximum | 4 Amperes |
| Power Dissipation Maximum | 40 Watts |
| Collector Emitter Voltage Maximum | 60 Volts |
| Operating Junction Temperature Range | -65 to +150 Degrees Celsius |
Ordering Information
| Parameter | Value |
|---|---|
| Packaging Type | TUBE |