Reference Only
MJE350
NPN Bipolar Transistor, 80V, 0.5A, TO-126 package
Datasheet
MJE350 Datasheet
Product Description
The MJE350 is a versatile NPN Bipolar Junction Transistor (BJT) manufactured by CENTRAL SEMICONDUCTOR. This transistor is designed for general-purpose amplification and switching applications. It features a collector-emitter voltage (Vceo) of 80V, a collector current (Ic) of 0.5A, and a power dissipation of 1.5W. The MJE350 is housed in a TO-126 package, making it easy to mount and integrate into various circuit designs. Its robust characteristics make it suitable for use in audio amplifiers, power supplies, and other electronic circuits. As an authorised distributor of CENTRAL SEMICONDUCTOR, Supreme Components International guarantees the authenticity and quality of the MJE350.
Technical Specifications
| Attribute | Description |
|---|---|
| Package_Type | TO-126 |
| Dc_Current_Gain | 40 to 250 |
| Power_Dissipation | 1.5 Watts |
| Transistor_Polarity | NPN |
| Transition_Frequency | 50 Megahertz |
| Collector_Current_Maximum | 0.5 Amperes |
| Maximum_Operating_Temperature | 150 Degrees Celsius |
| Maximum_Collector_Emitter_Voltage | 80 Volts |