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MJE350
Manufacturer Central Semiconductor
Short Description NPN Bipolar Transistor, 80V, 0.5A, TO-126 package
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Package Type
TO-126
Dc Current Gain
40 to 250
Power Dissipation
1.5 Watts
Transistor Polarity
NPN
Transition Frequency
50 Megahertz
Collector Current Maximum
0.5 Amperes
Maximum Operating Temperature
150 Degrees Celsius
Maximum Collector Emitter Voltage
80 Volts

Full Description

The MJE350 is a versatile NPN Bipolar Junction Transistor (BJT) manufactured by CENTRAL SEMICONDUCTOR. This transistor is designed for general-purpose amplification and switching applications. It features a collector-emitter voltage (Vceo) of 80V, a collector current (Ic) of 0.5A, and a power dissipation of 1.5W. The MJE350 is housed in a TO-126 package, making it easy to mount and integrate into various circuit designs. Its robust characteristics make it suitable for use in audio amplifiers, power supplies, and other electronic circuits. As an authorised distributor of CENTRAL SEMICONDUCTOR, Supreme Components International guarantees the authenticity and quality of the MJE350.

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