MJE350

MJE350

NPN Bipolar Transistor, 80V, 0.5A, TO-126 package

Product Category
Bipolar Transistors
Product Sub category
General Purpose Transistors

PRODUCT DETAILS

Product Description

The MJE350 is a versatile NPN Bipolar Junction Transistor (BJT) manufactured by CENTRAL SEMICONDUCTOR. This transistor is designed for general-purpose amplification and switching applications. It features a collector-emitter voltage (Vceo) of 80V, a collector current (Ic) of 0.5A, and a power dissipation of 1.5W. The MJE350 is housed in a TO-126 package, making it easy to mount and integrate into various circuit designs. Its robust characteristics make it suitable for use in audio amplifiers, power supplies, and other electronic circuits. As an authorised distributor of CENTRAL SEMICONDUCTOR, Supreme Components International guarantees the authenticity and quality of the MJE350.

Product Tags

Technical Specifications

Package type TO-126
Dc current gain 40 to 250
Power dissipation 1.5 Watts
Transistor polarity NPN
Transition frequency 50 Megahertz
Collector current maximum 0.5 Amperes
Maximum operating temperature 150 Degrees Celsius
Maximum collector emitter voltage 80 Volts
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