| Manufacturer | Central Semiconductor |
| Short Description | NPN Bipolar Transistor, 60V, 2A, TO-126 |
| Datasheet | 📄 Datasheet |
Product Attributes
TYPE
DESCRIPTION
Package Type
TO-126
Dc Current Gain
30 to 90
Transistor Polarity
NPN
Transition Frequency
5 Megahertz
Collector Current Maximum
2 Amperes
Power Dissipation Maximum
20 Watts
Operating Temperature Range
Negative 65 Degrees Celsius to Positive 150 Degrees Celsius
Collector Emitter Voltage Maximum
60 Volts
Full Description
The MJE252 is a robust NPN Bipolar Junction Transistor (BJT) manufactured by CENTRAL SEMICONDUCTOR. As an authorised distributor, Supreme Components International guarantees the authenticity and quality of this component. This transistor is designed for general-purpose amplification and switching applications. Key specifications include a collector-emitter voltage (Vceo) of 60V, a collector current (Ic) of 2A, and a power dissipation of 15W. The MJE252 is packaged in a TO-126 configuration, making it suitable for through-hole mounting. Its reliable performance and widely available package make it a popular choice for designers and engineers. Consider the MJE252 for your next project requiring a dependable NPN BJT.