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MJE182
Manufacturer Central Semiconductor
Short Description NPN Bipolar Transistor, 80V, 3A, 20W
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Package Type
TO-126
Dc Current Gain
40-120
Transistor Polarity
NPN
Power Dissipation Watts
20 W
Collector Current Amperes
3 A
Transition Frequency Megahertz
50 MHz
Collector Emitter Voltage Volts
80 V
Maximum Operating Temperature Celsius
150 C

Full Description

The MJE182 is a high-performance NPN Bipolar Junction Transistor (BJT) manufactured by CENTRAL SEMICONDUCTOR. As an authorised distributor, Supreme Components International guarantees the authenticity and quality of this discrete semiconductor. This transistor is designed for a wide range of applications, including amplification and switching circuits. Key features include a collector-emitter voltage (Vceo) of 80V, a continuous collector current (Ic) of 3A, and a power dissipation (Pd) of 20W. The MJE182 offers excellent gain and switching characteristics, making it suitable for use in power supplies, motor control, and audio amplifiers. Its robust design ensures reliable performance in demanding environments. Choose the MJE182 for your next project and experience the quality of CENTRAL SEMICONDUCTOR components.

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