MJE182

MJE182

NPN Bipolar Transistor, 80V, 3A, 20W

Product Category
Bipolar Transistors
Product Sub category
General Purpose Transistors

PRODUCT DETAILS

Product Description

The MJE182 is a high-performance NPN Bipolar Junction Transistor (BJT) manufactured by CENTRAL SEMICONDUCTOR. As an authorised distributor, Supreme Components International guarantees the authenticity and quality of this discrete semiconductor. This transistor is designed for a wide range of applications, including amplification and switching circuits. Key features include a collector-emitter voltage (Vceo) of 80V, a continuous collector current (Ic) of 3A, and a power dissipation (Pd) of 20W. The MJE182 offers excellent gain and switching characteristics, making it suitable for use in power supplies, motor control, and audio amplifiers. Its robust design ensures reliable performance in demanding environments. Choose the MJE182 for your next project and experience the quality of CENTRAL SEMICONDUCTOR components.

Product Tags

Technical Specifications

Package type TO-126
Dc current gain 40-120
Transistor polarity NPN
Power dissipation watts 20 W
Collector current amperes 3 A
Transition frequency megahertz 50 MHz
Collector emitter voltage volts 80 V
Maximum operating temperature celsius 150 C
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