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MJD112

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MJD112
Manufacturer JSCJ (JCET)
Short Description NPN Darlington Transistor, 100V, 2A, SOT-252
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Package Type
SOT-252
Dc Current Gain
750 to 20000
Transistor Polarity
NPN
Collector Current Maximum
2 Amperes
Power Dissipation Maximum
15 Watts
Operating Temperature Range
Negative 65 Degrees Celsius to Positive 150 Degrees Celsius
Collector Emitter Voltage Maximum
100 Volts

Full Description

Supreme Components International, an authorised distributor, presents the MJD112, a high-performance NPN Darlington Transistor from JSCJ (JCET). This transistor is designed for applications requiring high current gain and moderate power handling capabilities. Encased in a compact SOT-252 package, the MJD112 offers a collector-emitter voltage (Vceo) of 100V and a continuous collector current (Ic) of 2A. Its Darlington configuration provides significantly higher current gain compared to standard bipolar transistors, making it suitable for amplifier and switching circuits. The MJD112 is a reliable and efficient component for diverse electronic projects, ensuring optimal performance and longevity. Benefit from Supreme Components International's commitment to quality and authenticity when sourcing your electronic components.

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