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GE2X8MPS06D
Manufacturer GeneSiC Semiconductor
Short Description 650V, 8A SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Gate Charge
12 nano Coulombs
Package Type
TO-252-2
Voltage Rating
650 Volts
Forward Current Rating
8 Amperes
Forward Voltage Typical
1.45 Volts
Continuous Current Rating
8 Amperes
Maximum Junction Temperature
175 degrees Celsius

Full Description

The GE2X8MPS06D is a high-performance 650V, 8A Silicon Carbide (SiC) Schottky Diode from GeneSiC Semiconductor. Supreme Components International is an authorised distributor, ensuring you receive genuine components. This diode offers superior switching performance compared to traditional silicon diodes, resulting in higher efficiency and reduced heat dissipation. It's ideal for applications such as power factor correction (PFC), motor drives, solar inverters, and other high-frequency power conversion systems. The GE2X8MPS06D features a low forward voltage drop and negligible reverse recovery charge, contributing to improved system performance and reliability. Choose this SiC Schottky diode for demanding applications where efficiency and robustness are critical. Benefit from GeneSiC's advanced technology and SCI's commitment to quality.

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