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GE2X12MPS06D
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 6A SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Technology
Silicon Carbide (SiC)
Gate Charge
18 nanocoulombs
Package Type
TO-252-2
Configuration
Single
Current Rating
6 amperes
Mounting Style
Surface Mount
Voltage Rating
1200 volts
Forward Current Rating
6 amperes
Forward Voltage Typical
1.6 volts
Operating Temperature Range
Minus 55 degrees Celsius to Plus 175 degrees Celsius
Maximum Junction Temperature
175 degrees Celsius
Repetitive Peak Reverse Voltage
1200 volts
Reverse Leakage Current Typical
10 microamperes

Full Description

The GE2X12MPS06D SiC Schottky Diode from GeneSiC Semiconductor is designed for high-voltage, high-frequency applications. Featuring a voltage rating of 1200V and a forward current of 6A, this diode provides exceptional efficiency and reliability. Its Silicon Carbide (SiC) construction enables significantly faster switching speeds and lower reverse recovery losses compared to traditional silicon diodes. This results in improved system efficiency and reduced heat dissipation. Typical applications include power factor correction (PFC), solar inverters, electric vehicle charging, and motor drives. As an authorised distributor of GeneSiC Semiconductor, Supreme Components International guarantees the authenticity and quality of this product. Benefit from the superior performance of SiC technology with the GE2X12MPS06D.

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