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GE2X10MPS06D
Manufacturer GeneSiC Semiconductor
Short Description 650V, 10A SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Package Type
TO-252-2
Voltage Rating Volts
650
Forward Voltage Volts
1.6
Current Rating Amperes
10
Operating Temperature Range
-55 to +175 degrees Celsius
Reverse Recovery Time Nanoseconds
0

Full Description

The GE2X10MPS06D SiC Schottky Diode, manufactured by GENESIC SEMICONDUCTOR, is a 650V, 10A device designed for high-efficiency power conversion applications. As an authorised distributor, Supreme Components International guarantees the authenticity and quality of this component. SiC Schottky diodes offer significant advantages over silicon diodes, including faster switching speeds, lower reverse recovery charge, and higher operating temperatures. This results in improved efficiency, reduced EMI, and increased system reliability. The GE2X10MPS06D is suitable for use in power factor correction (PFC) circuits, motor drives, and other demanding applications. Benefit from the superior performance and reliability of GENESIC SEMICONDUCTOR SiC technology. Contact us for volume pricing and technical support.

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