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GE12MPS06Q
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 6A SiC Schottky Diode in Q-Package from GeneSiC Semiconductor.
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Package Type
Q-Package
Forward Voltage Drop
1.6V
Forward Current Rating
6 A
Maximum Voltage Rating
1200V
Typical Forward Voltage
1.6V
Surge Current Capability
30A
Continuous Forward Current
6A
Operating Temperature Range
-55°C to +175°C
Repetitive Peak Reverse Voltage
1200V
Maximum Repetitive Reverse Voltage
1200 V

Full Description

The GE12MPS06Q is a high-performance 1200V, 6A Silicon Carbide (SiC) Schottky Diode manufactured by GeneSiC Semiconductor. Supreme Components International is an authorised distributor of GeneSiC Semiconductor components. This diode, packaged in a Q-Package, leverages the superior material properties of SiC to deliver exceptional switching characteristics, near-zero reverse recovery current, and temperature-independent switching behavior. These features make the GE12MPS06Q ideal for demanding applications such as power factor correction (PFC), motor drives, solar inverters, and other high-frequency power conversion systems. By minimizing switching losses and improving overall system efficiency, the GE12MPS06Q contributes to smaller, lighter, and more efficient power electronic designs. Supreme Components International ensures authenticity and reliable supply as an authorised distributor.

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