The GE12MPS06E SiC Schottky Barrier Diode from GeneSiC Semiconductor offers a compelling solution for demanding power electronics applications. Featuring a voltage rating of 1200V and a forward current of 6A, this diode minimizes switching losses and improves overall system efficiency. The MPS (Merged PiN Schottky) design enhances surge current capability and reduces reverse recovery charge. Its TO-252-2 package provides excellent thermal performance. Typical applications include power factor correction (PFC) circuits, solar inverters, electric vehicle charging, and motor drives. Benefit from the superior performance of SiC technology with the GE12MPS06E. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, ensuring you receive genuine, high-quality components.