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GE12MPS06E
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 6A SiC Schottky Barrier Diode, MPS, TO-252-2
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Technology
Silicon Carbide Schottky
Package Type
TO-252-2
Configuration
Single Diode
Current Rating
6 Amperes
Voltage Rating
1200 Volts
Forward Voltage
1.7 Volts at 6 Amperes
Maximum Surge Current
40 Amperes
Reverse Recovery Time
0 Nanoseconds
Operating Temperature Range
-55 Degrees Celsius to +175 Degrees Celsius

Ordering Information

Parameter
Value
Packaging Type
TAPE_AND_REEL

Full Description

The GE12MPS06E SiC Schottky Barrier Diode from GeneSiC Semiconductor offers a compelling solution for demanding power electronics applications. Featuring a voltage rating of 1200V and a forward current of 6A, this diode minimizes switching losses and improves overall system efficiency. The MPS (Merged PiN Schottky) design enhances surge current capability and reduces reverse recovery charge. Its TO-252-2 package provides excellent thermal performance. Typical applications include power factor correction (PFC) circuits, solar inverters, electric vehicle charging, and motor drives. Benefit from the superior performance of SiC technology with the GE12MPS06E. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, ensuring you receive genuine, high-quality components.

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