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GE10MPS06E
Manufacturer GeneSiC Semiconductor
Short Description 10A, 600V SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Packagetype
TO-220AC
Surgecurrent
70 Amperes
Currentrating
10 Amperes
Voltagerating
600 Volts
Forwardcurrentrating
10 Amperes
Reverserecoverycharge
22 nanoCoulombs
Typicalforwardvoltage
1.45 Volts
Maximumjunctiontemperature
175 degrees Celsius

Full Description

The GE10MPS06E SiC Schottky Diode from GeneSiC Semiconductor, available at Supreme Components International, an authorised distributor, offers exceptional performance in demanding power electronics applications. This 10A, 600V diode leverages Silicon Carbide (SiC) technology to deliver ultra-fast switching speeds, near-zero reverse recovery current, and temperature-independent switching behavior. These characteristics contribute to significantly reduced switching losses and improved overall system efficiency. The GE10MPS06E is well-suited for use in power factor correction (PFC) circuits, motor drives, solar inverters, and other high-frequency power conversion systems. Its robust design ensures reliable operation even under harsh conditions. Choose the GE10MPS06E for superior performance and efficiency in your power electronics designs. Supreme Components International guarantees genuine components and reliable supply.

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