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GE08MPS06E
Manufacturer GeneSiC Semiconductor
Short Description 8A, 600V SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Package Type
TO-252-2
Current Rating
8 Amperes
Voltage Rating
600 Volts
Forward Voltage
1.7 Volts
Typical Forward Voltage
1.45 Volts
Operating Temperature Range
-55 Degrees Celsius to +175 Degrees Celsius
Maximum Junction Temperature
175 Degrees Celsius
Repetitive Peak Reverse Current
10 Amperes
Repetitive Peak Reverse Voltage
600 Volts

Full Description

The GE08MPS06E is a high-performance 8A, 600V Silicon Carbide (SiC) Schottky Diode manufactured by GeneSiC Semiconductor. Supreme Components International is an authorised distributor of GeneSiC, ensuring you receive genuine components. This SiC Schottky diode offers significant advantages over traditional silicon diodes, including near-zero reverse recovery current, temperature-independent switching behavior, and high surge current capability. These features contribute to improved efficiency, reduced EMI, and increased system reliability. Ideal for applications such as power factor correction (PFC), solar inverters, motor drives, and high-frequency power supplies. The GE08MPS06E enables designers to achieve higher power densities and improved overall system performance. Explore the benefits of SiC technology with this reliable and efficient diode.

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