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GE08MPS06A
Manufacturer GeneSiC Semiconductor
Short Description 8A, 600V SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Package Type
TO-252-2
Mounting Style
Surface Mount
Charge Quantity
18 nanoCoulombs
Current Capacity
8 Amperes
Voltage Capacity
600 Volts
Forward Current Rating
8 Amperes
Operating Temperature Range
-55 degrees Celsius to +175 degrees Celsius
Maximum Junction Temperature
175 degrees Celsius
Repetitive Peak Reverse Voltage
600 Volts
Forward Voltage At 25 Degrees Celsius
1.65 Volts

Full Description

The GE08MPS06A is a high-performance 8A, 600V Silicon Carbide (SiC) Schottky Diode manufactured by GeneSiC Semiconductor. Supreme Components International is an authorised distributor of GeneSiC Semiconductor components, ensuring you receive genuine and reliable products. This SIC_SCHOTTKY_DIODE offers significant advantages over traditional silicon diodes, including faster switching speeds, lower reverse recovery current, and higher operating temperatures. These characteristics make it ideal for applications such as power factor correction (PFC), motor drives, and solar inverters. The GE08MPS06A enhances efficiency and reduces system size and cost. Its robust design ensures long-term reliability in demanding environments. Consider this diode for your next power electronics project.

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