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GE04MPS06Q
Manufacturer GeneSiC Semiconductor
Short Description Silicon Carbide Schottky Rectifier Diode, 600V, 4A
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Package Type
TO-252-2
Current Rating
4 Amperes
Voltage Rating
600 Volts
Forward Voltage At 25c
1.6 Volts
Peak Forward Surge Current
40 Amperes
Maximum Junction Temperature
175 Degrees Celsius

Full Description

Supreme Components International, an authorised distributor, presents the GE04MPS06Q, a Silicon Carbide (SiC) Schottky Rectifier Diode manufactured by GeneSiC Semiconductor. This diode is designed for high-performance applications requiring efficient and fast switching. With a voltage rating of 600V and a forward current of 4A, the GE04MPS06Q offers superior performance compared to traditional silicon diodes. Its SiC technology minimizes reverse recovery losses, resulting in improved efficiency and reduced heat generation. This diode is suitable for power factor correction (PFC), motor drives, and other high-frequency applications. Benefit from the reliability and performance of GeneSiC Semiconductor's advanced SiC technology with the GE04MPS06Q, available through Supreme Components International.

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