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GE04MPS06E
Manufacturer GeneSiC Semiconductor
Short Description 4A, 600V SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Package Type
TO-252-2
Current Rating
4 Amperes
Voltage Rating
600 Volts
Typical Forward Voltage
1.45 Volts
Peak Forward Surge Current
40 Amperes
Maximum Junction Temperature
175 Degrees Celsius

Full Description

The GE04MPS06E SiC Schottky Diode, manufactured by GeneSiC Semiconductor, is a robust and efficient component designed for demanding power electronics applications. With a forward current of 4A and a voltage rating of 600V, this diode offers exceptional performance in high-frequency circuits. Its Silicon Carbide (SiC) construction enables fast switching speeds, reduced switching losses, and improved thermal management compared to conventional silicon diodes. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, ensuring you receive genuine, high-quality components. This diode is suitable for use in power factor correction (PFC), motor drives, and other applications where efficiency and reliability are critical. Benefit from the superior performance of SiC technology with the GE04MPS06E.

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