GeneSiC Semiconductor Logo
GD30MPS12J
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 30A SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Gate Charge
38 nanocoulombs
Package Type
TO-247-2
Voltage Rating
1200 volts
Forward Current Rating
30 amperes
Typical Forward Voltage
1.6 volts
Continuous Current Rating
30 amperes
Maximum Junction Temperature
175 degrees Celsius
Repetitive Peak Reverse Voltage
1200 volts

Full Description

The GD30MPS12J is a robust 1200V, 30A Silicon Carbide (SiC) Schottky Diode manufactured by GENESIC SEMICONDUCTOR. Supreme Components International is an authorised distributor, ensuring you receive genuine, high-quality components. This diode offers superior performance compared to traditional silicon diodes, including significantly reduced switching losses and improved thermal performance. Its fast reverse recovery time and low forward voltage drop contribute to higher efficiency in power electronic circuits. Typical applications include power factor correction (PFC), motor drives, solar inverters, and other high-frequency power conversion systems. The GD30MPS12J is designed for demanding environments and provides reliable operation in a compact package. Benefit from the advantages of SiC technology with this GENESIC SEMICONDUCTOR diode.

This is a staging environment
×