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GD30MPS06H
Manufacturer GeneSiC Semiconductor
Short Description SiC Schottky Diode, 600V, 30A, MPS
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Technology
Silicon Carbide Schottky
Package Type
TO-220-2
Current Rating
30 Amperes
Voltage Rating
600 Volts
Operating Temperature
-55 Degrees Celsius to +175 Degrees Celsius
Peak Forward Surge Current
200 Amperes
Forward Voltage At 25 Degrees Celsius
1.6 Volts

Full Description

The GD30MPS06H SiC Schottky Diode, manufactured by GeneSiC Semiconductor and available from Supreme Components International, an authorised distributor, offers exceptional performance in high-voltage, high-frequency applications. This 600V, 30A diode utilizes Silicon Carbide (SiC) technology to deliver superior switching characteristics, reduced reverse recovery losses, and improved thermal performance compared to traditional silicon diodes. Its low forward voltage drop minimizes power dissipation, enhancing overall system efficiency. Ideal for use in power factor correction (PFC) circuits, motor drives, solar inverters, and other demanding applications, the GD30MPS06H ensures reliable and efficient operation. Benefit from the enhanced performance and reliability of SiC technology with this GeneSiC diode. Supreme Components International guarantees authenticity and quality.

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