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GD2X10MPS12D
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 10A SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Technology
Silicon Carbide (SiC)
Package Type
TO-252-2
Configuration
Single
Current Rating
10 amperes
Voltage Rating
1200 volts
Charge Quantity
18 nanocoulombs
Forward Current Rating
10 amperes
Typical Forward Voltage
1.6 volts
Maximum Junction Temperature
175 degrees Celsius
Repetitive Peak Reverse Voltage
1200 volts

Full Description

The GD2X10MPS12D is a high-voltage, high-current Silicon Carbide (SiC) Schottky Diode manufactured by GENESIC SEMICONDUCTOR. Supreme Components International is an authorised distributor of GENESIC SEMICONDUCTOR components, ensuring you receive genuine and reliable products. This diode features a voltage rating of 1200V and a forward current of 10A, making it suitable for a wide range of power electronics applications. SiC Schottky diodes offer significant advantages over silicon diodes, including faster switching speeds, lower reverse recovery charge, and higher operating temperatures. These characteristics contribute to improved efficiency, reduced power losses, and enhanced system performance. Ideal for power factor correction (PFC), motor drives, and renewable energy systems.

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