Reference Only
GD10MPS12E
1200V, 10A SiC Schottky Diode
Manufacturer:
GeneSiC SemiconductorSub Category:
OTHER
Datasheet
GD10MPS12E Datasheet
Product Description
Supreme Components International, an authorised distributor, presents the GD10MPS12E, a cutting-edge 1200V, 10A SiC Schottky Diode from GeneSiC Semiconductor. This diode leverages the superior properties of Silicon Carbide to deliver exceptional performance in demanding applications. Its key features include near-zero reverse recovery current, temperature-independent switching behavior, and high surge current capability. The GD10MPS12E is perfect for power factor correction (PFC), motor drives, solar inverters, and other high-frequency applications. Benefit from reduced switching losses, increased efficiency, and improved reliability with this advanced SiC Schottky Diode. Choose Supreme Components International for genuine GeneSiC Semiconductor components and expert support.
Technical Specifications
| Attribute | Description |
|---|---|
| Package Type | TO-252-2 |
| Maximum Current Rating | 10 Amperes |
| Maximum Voltage Rating | 1200 Volts |
| Forward Voltage Typical | 1.7 Volts |
| Maximum Junction Temperature | 175 degrees Celsius |
| Reverse Leakage Current Typical | 10 microAmperes |