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GD10MPS12E
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 10A SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Packagetype
TO-252-2
Maximumcurrentrating
10 Amperes
Maximumvoltagerating
1200 Volts
Forwardvoltagetypical
1.7 Volts
Maximumjunctiontemperature
175 degrees Celsius
Reverseleakagecurrenttypical
10 microAmperes

Full Description

Supreme Components International, an authorised distributor, presents the GD10MPS12E, a cutting-edge 1200V, 10A SiC Schottky Diode from GeneSiC Semiconductor. This diode leverages the superior properties of Silicon Carbide to deliver exceptional performance in demanding applications. Its key features include near-zero reverse recovery current, temperature-independent switching behavior, and high surge current capability. The GD10MPS12E is perfect for power factor correction (PFC), motor drives, solar inverters, and other high-frequency applications. Benefit from reduced switching losses, increased efficiency, and improved reliability with this advanced SiC Schottky Diode. Choose Supreme Components International for genuine GeneSiC Semiconductor components and expert support.

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