
Manufacturer | GeneSiC Semiconductor |
Short Description | SiC Schottky Diode 1200V 8A TO-220 |
Datasheet | 📄 Datasheet |
Product Attributes
TYPE
DESCRIPTION
Category
Technology
Silicon Carbide Schottky
Package Type
TO-220
Current Rating
8 Amperes
Voltage Rating
1200 Volts
Typical Forward Voltage
1.6 Volts
Peak Forward Surge Current
60 Amperes
Operating Temperature Range
-55 Degrees Celsius to +175 Degrees Celsius
Full Description
The GC08MPS12-220 SiC Schottky Diode, manufactured by GeneSiC Semiconductor and available from Supreme Components International, an authorised distributor, offers superior performance compared to traditional silicon diodes. This 1200V, 8A diode in a TO-220 package boasts near-zero reverse recovery current, temperature-independent switching behavior, and high surge current capability. These characteristics make it ideal for applications such as power factor correction (PFC), motor drives, solar inverters, and other high-frequency power conversion systems. Its low forward voltage drop minimizes power losses, contributing to increased system efficiency. The robust TO-220 package ensures reliable thermal performance.