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GC05MPS33J
Manufacturer GeneSiC Semiconductor
Short Description 5A, 3300V SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Package Type
TO-220
Current Rating
5A
Voltage Rating
3300V
Charge Quantity
15 nanoCoulombs
Forward Current
5A
Typical Forward Voltage
2.8V
Maximum Junction Temperature
175 degrees Celsius
Repetitive Peak Reverse Voltage
3300V

Full Description

The GC05MPS33J is a high-voltage Silicon Carbide (SiC) Schottky Diode manufactured by GeneSiC Semiconductor. Supreme Components International is an authorised distributor of GeneSiC components. This diode features a voltage rating of 3300V and a forward current of 5A, making it suitable for a wide range of applications, including power factor correction (PFC), motor drives, and high-frequency inverters. SiC Schottky diodes offer significant advantages over traditional silicon diodes, such as faster switching speeds, lower reverse recovery current, and higher operating temperatures. These characteristics contribute to improved efficiency and reliability in power electronic systems. The GC05MPS33J is designed for optimal performance in demanding environments, providing a robust and dependable solution for your high-voltage diode needs. Its superior thermal performance and low leakage current further enhance its suitability for critical applications.

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