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GB05MPS33-263

GB05MPS33-263

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GB05MPS33-263

5A, 3300V SiC Schottky Diode

Category:
Discrete Semiconductors
Sub Category:
OTHER
GeneSiC Semiconductor

Product Description

The GB05MPS33-263 is a high-performance 5A, 3300V Silicon Carbide (SiC) Schottky Diode manufactured by GeneSiC Semiconductor. Available at Supreme Components International, an authorised distributor, this diode offers significant advantages over traditional silicon diodes, including faster switching speeds, lower reverse recovery current, and higher operating temperatures. These features contribute to improved efficiency and reliability in power electronic systems. The GB05MPS33-263 is well-suited for applications such as power factor correction (PFC), motor drives, solar inverters, and other high-voltage, high-frequency circuits. Its robust design ensures stable performance even under demanding conditions, making it a preferred choice for engineers seeking to optimize their designs for efficiency and reliability. Benefit from the superior performance of SiC technology with this GeneSiC diode.

Product Tags

Technical Specifications

Attribute Description
Technology Silicon Carbide Schottky
Package Type TO-263
Surge Current 30 A
Current Rating 5 A
Voltage Rating 3300 V
Forward Voltage 2 V
Forward Current Rating 5 A
Typical Forward Voltage 2.0 V
Operating Temperature Range -55 to +175 °C
Repetitive Peak Reverse Voltage 3300 V
Maximum Repetitive Reverse Voltage 3300 V
This is a staging environment

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