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GB05MPS33-263

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GB05MPS33-263
Manufacturer GeneSiC Semiconductor
Short Description 5A, 3300V SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Technology
Silicon Carbide Schottky
Package Type
TO-263
Surge Current
30 A
Current Rating
5 A
Voltage Rating
3300 V
Forward Voltage
2 V
Forward Current Rating
5 A
Typical Forward Voltage
2.0 V
Operating Temperature Range
-55 to +175 °C
Repetitive Peak Reverse Voltage
3300 V
Maximum Repetitive Reverse Voltage
3300 V

Full Description

The GB05MPS33-263 is a high-performance 5A, 3300V Silicon Carbide (SiC) Schottky Diode manufactured by GeneSiC Semiconductor. Available at Supreme Components International, an authorised distributor, this diode offers significant advantages over traditional silicon diodes, including faster switching speeds, lower reverse recovery current, and higher operating temperatures. These features contribute to improved efficiency and reliability in power electronic systems. The GB05MPS33-263 is well-suited for applications such as power factor correction (PFC), motor drives, solar inverters, and other high-voltage, high-frequency circuits. Its robust design ensures stable performance even under demanding conditions, making it a preferred choice for engineers seeking to optimize their designs for efficiency and reliability. Benefit from the superior performance of SiC technology with this GeneSiC diode.

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