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GB01SLT12-252

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GB01SLT12-252
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 1A SiC Schottky Diode from GeneSiC Semiconductor
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Package Type
TO-252
Voltage Rating Volts
1200
Forward Voltage Volts
1.7
Current Rating Amperes
1
Operating Temperature Range
-55 to +175 degrees Celsius
Reverse Recovery Time Nanoseconds
0

Full Description

The GB01SLT12-252 is a 1200V, 1A Silicon Carbide (SiC) Schottky Diode manufactured by GeneSiC Semiconductor. Supreme Components International is an authorised distributor of GeneSiC components. This diode offers superior performance compared to traditional silicon diodes, featuring fast switching speeds, near-zero reverse recovery current, and temperature-independent switching behavior. These characteristics make it ideal for applications such as power factor correction (PFC), motor drives, solar inverters, and other high-frequency power conversion systems. The GB01SLT12-252 provides enhanced efficiency, reduced EMI, and improved system reliability. Its robust design ensures stable operation even under harsh conditions. Choose this SiC Schottky diode for your next-generation power electronics design.

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