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GB01SLT06-214

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GB01SLT06-214
Manufacturer GeneSiC Semiconductor
Short Description SIC SCHOTTKY DIODE 600V 1A TO-252-2
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Package Type
TO-252-2
Current Rating
1 Ampere
Voltage Rating
600 Volts
Typical Forward Voltage
1.45 Volts
Peak Forward Surge Current
15 Amperes
Maximum Junction Temperature
175 Degrees Celsius

Full Description

Supreme Components International, an authorised distributor, presents the GB01SLT06-214, a high-performance Silicon Carbide (SiC) Schottky Diode manufactured by GENESIC SEMICONDUCTOR. This diode features a voltage rating of 600V and a forward current of 1A, housed in a compact TO-252-2 package. SiC Schottky diodes offer significant advantages over traditional silicon diodes, including faster reverse recovery times, lower forward voltage drop, and improved thermal performance. These characteristics make the GB01SLT06-214 ideal for use in power factor correction (PFC) circuits, motor drives, and other high-frequency, high-efficiency power conversion applications. Its robust design ensures reliable operation in demanding environments, contributing to increased system efficiency and reduced energy consumption. Choose this diode for superior performance and reliability in your power electronic designs.

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