Reference Only
GAP3SLT33-214
3.3kV, 214A, SiC Schottky Diode
Manufacturer:
GeneSiC SemiconductorSub Category:
OTHER
Datasheet
GAP3SLT33-214 Datasheet
Product Description
Supreme Components International, an authorised distributor, presents the GAP3SLT33-214, a high-voltage, high-current SiC Schottky Diode from GeneSiC Semiconductor. This diode features a voltage rating of 3.3kV and a forward current of 214A, making it suitable for a wide range of applications, including power factor correction (PFC), motor drives, and renewable energy systems. SiC Schottky diodes offer significant advantages over traditional silicon diodes, such as faster switching speeds, lower reverse recovery charge, and higher operating temperatures. These characteristics contribute to improved efficiency, reduced EMI, and increased system reliability. The GAP3SLT33-214 is designed for optimal performance and durability in demanding environments. Choose Supreme Components International for genuine GeneSiC Semiconductor components and expert support.
Technical Specifications
| Attribute | Description |
|---|---|
| Technology | Silicon Carbide Schottky |
| Package_Type | TO-247-3 |
| Current_Rating | 214 Amperes |
| Voltage_Rating | 3300 Volts |
| Operating_Temperature | -55 to +175 Degrees Celsius |
| Typical_Forward_Voltage | 1.7 Volts |
| Peak_Forward_Surge_Current | 1200 Amperes |