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G3R75MT12D
Manufacturer GeneSiC Semiconductor
Short Description SIC SCHOTTKY DIODE 1200V 75A DIE
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Technology
Third Generation Silicon Carbide
Package Type
Bare Die
Current Rating
75 Amperes
Voltage Rating
1200 Volts
Typical Gate Charge
100 nanoCoulombs
Typical Forward Voltage
1.6 Volts
Operating Temperature Range
-55 Degrees Celsius to +175 Degrees Celsius

Full Description

The G3R75MT12D is a Silicon Carbide (SiC) Schottky Diode manufactured by GENESIC SEMICONDUCTOR. Supreme Components International is an authorised distributor of GENESIC SEMICONDUCTOR components. This diode features a voltage rating of 1200V and a current rating of 75A, making it suitable for a wide range of high-power applications. SiC Schottky diodes offer significant advantages over traditional silicon diodes, including lower forward voltage drop, faster reverse recovery time, and higher operating temperature capabilities. These characteristics contribute to improved efficiency and reduced switching losses in power electronic systems. The G3R75MT12D is ideal for use in power factor correction (PFC) circuits, motor drives, and other high-frequency switching applications. Contact Supreme Components International for expert support and competitive pricing.

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