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G3R40MT12K
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 40mOhm, SiC MOSFET
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Technology
Silicon Carbide MOSFET
Package Type
TO-247-3
Drain Source Voltage
1200 Volts
Continuous Drain Current
60 Amperes
Drain Source On Resistance
40 mOhm

Full Description

The G3R40MT12K SiC MOSFET from GENESIC SEMICONDUCTOR represents a significant advancement in power semiconductor technology. Featuring a voltage rating of 1200V and a low on-resistance of 40mOhm, this device enables efficient and reliable operation in high-power applications. As an authorised distributor, Supreme Components International provides access to this cutting-edge component, ensuring quality and authenticity. SiC MOSFETs offer superior performance compared to traditional silicon MOSFETs, including faster switching speeds, lower switching losses, and higher temperature operation. This makes the G3R40MT12K ideal for use in power supplies, inverters, motor drives, and other demanding applications where efficiency and reliability are critical. Benefit from the enhanced performance and durability of GENESIC SEMICONDUCTOR's SiC MOSFET technology.

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