Reference Only
G3R40MT12J
1200V, 40A SiC Schottky Diode in a TO-247-2 package.
Datasheet
G3R40MT12J Datasheet
Product Description
The G3R40MT12J is a high-performance 1200V, 40A Silicon Carbide (SiC) Schottky Diode manufactured by GeneSiC Semiconductor. This diode features a TO-247-2 package and is designed for applications requiring high efficiency and fast switching speeds. SiC Schottky diodes offer significant advantages over traditional silicon diodes, including lower reverse recovery charge, temperature-independent switching behavior, and higher operating frequencies. These characteristics make the G3R40MT12J ideal for use in power factor correction (PFC) circuits, motor drives, solar inverters, and other high-power applications. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, ensuring you receive authentic components with full traceability and support. Benefit from the enhanced performance and reliability of SiC technology with the G3R40MT12J.
Technical Specifications
| Attribute | Description |
|---|---|
| Package_Type | TO-247-2 |
| Voltage_Rating_Volts | 1200 |
| Forward_Voltage_Volts | 1.7 |
| Current_Rating_Amperes | 40 |
| Operating_Temperature_Range | -55 to +175 degrees Celsius |
| Reverse_Recovery_Time_Nanoseconds | 0 |