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G3R40MT12D
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 40A SiC Schottky Diode in TO-247-2 package
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Technology
Silicon Carbide Schottky
Package Type
TO-247-2
Configuration
Single
Current Rating
40 amperes
Voltage Rating
1200 volts
Charge Quantity
55 nanocoulombs
Forward Current Rating
40 amperes
Typical Forward Voltage
1.7 volts
Maximum Junction Temperature
175 degrees Celsius
Repetitive Peak Reverse Voltage
1200 volts

Full Description

Supreme Components International, an authorised distributor, presents the G3R40MT12D, a robust 1200V, 40A Silicon Carbide (SiC) Schottky Diode manufactured by GeneSiC Semiconductor. This diode, housed in a TO-247-2 package, offers superior performance compared to traditional silicon diodes. Its SiC construction enables significantly faster switching speeds, reduced reverse recovery charge, and lower forward voltage drop. These characteristics make it ideal for applications such as power factor correction (PFC), motor drives, solar inverters, and other high-frequency power conversion systems. The G3R40MT12D enhances efficiency, reduces heat dissipation, and improves the overall reliability of your designs. Choose this SiC Schottky diode for demanding applications where performance and efficiency are critical.

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