The G3R350MT12J SiC Schottky Diode from GeneSiC Semiconductor represents a significant advancement in power electronics. This 3.5A, 1200V diode, available at Supreme Components International, an authorized distributor, offers exceptional performance characteristics. Its Silicon Carbide (SiC) construction enables significantly faster switching speeds and lower reverse recovery losses compared to conventional silicon diodes. This results in higher efficiency and reduced heat generation in power conversion applications. The TO-252-2 package provides excellent thermal performance and ease of mounting. Key applications include power factor correction (PFC), motor drives, solar inverters, and other high-frequency power systems where efficiency and reliability are critical. Benefit from the superior performance of GeneSiC's SiC technology with the G3R350MT12J.