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G3R350MT12D
Manufacturer GeneSiC Semiconductor
Short Description SIC SCHOTTKY DIODE 1200V 350A DIE
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Packagetype
Die
Currentrating
350 Amperes
Voltagerating
1200 Volts
Technologytype
GEN3 SIC SCHOTTKY
Typicalforwardvoltage
1.65 Volts
Maximumjunctiontemperature
175 Degrees Celsius

Full Description

The G3R350MT12D, manufactured by GENESIC SEMICONDUCTOR, is a robust Silicon Carbide (SiC) Schottky Diode offered by Supreme Components International, an authorised distributor. This diode is designed for high-voltage, high-current applications, boasting a voltage rating of 1200V and a current rating of 350A. Its SiC construction enables superior performance compared to traditional silicon diodes, including faster switching speeds, lower reverse recovery charge, and higher operating temperatures. This die-form diode is ideal for integration into power modules and custom circuit designs. Applications include power factor correction (PFC), motor drives, and renewable energy systems. Benefit from the reliability and efficiency of SiC technology with the G3R350MT12D.

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