G3R350MT12D

Reference Only

G3R350MT12D

SIC SCHOTTKY DIODE 1200V 350A DIE

Category:
Discrete Semiconductors
Sub Category:
OTHER
GeneSiC Semiconductor

Product Description

The G3R350MT12D, manufactured by GENESIC SEMICONDUCTOR, is a robust Silicon Carbide (SiC) Schottky Diode offered by Supreme Components International, an authorised distributor. This diode is designed for high-voltage, high-current applications, boasting a voltage rating of 1200V and a current rating of 350A. Its SiC construction enables superior performance compared to traditional silicon diodes, including faster switching speeds, lower reverse recovery charge, and higher operating temperatures. This die-form diode is ideal for integration into power modules and custom circuit designs. Applications include power factor correction (PFC), motor drives, and renewable energy systems. Benefit from the reliability and efficiency of SiC technology with the G3R350MT12D.

Product Tags

Technical Specifications

Attribute Description
Package Type Die
Current Rating 350 Amperes
Voltage Rating 1200 Volts
Technology Type GEN3 SIC SCHOTTKY
Typical Forward Voltage 1.65 Volts
Maximum Junction Temperature 175 Degrees Celsius
This is a staging environment

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