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G3R30MT12J
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 30A SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Package Type
TO-247-2
Current Rating
30 Amperes
Voltage Rating
1200 Volts
Charge Quantity
45 nanoCoulombs
Forward Current
30 Amperes
Typical Forward Voltage
1.6 Volts
Maximum Junction Temperature
175 Degrees Celsius
Repetitive Peak Reverse Voltage
1200 Volts

Full Description

The G3R30MT12J from GeneSiC Semiconductor is a robust 1200V, 30A SiC Schottky Diode, available at Supreme Components International, an authorised distributor. This diode leverages Silicon Carbide (SiC) technology to deliver exceptional performance in high-voltage and high-frequency applications. Its key features include zero reverse recovery current, temperature-independent switching behavior, and a positive temperature coefficient for easy paralleling. The G3R30MT12J significantly reduces switching losses and improves overall system efficiency. Typical applications include power supplies, solar inverters, electric vehicle chargers, and industrial motor drives. Benefit from the reliability and efficiency of SiC technology with this GeneSiC diode.

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