G3R20MT12K

Reference Only

G3R20MT12K

SiC MOSFET 1200V 20mOhm

Category:
Discrete Semiconductors
Sub Category:
OTHER
GeneSiC Semiconductor

Product Description

The G3R20MT12K SiC MOSFET, manufactured by GeneSiC Semiconductor, represents a significant advancement in power semiconductor technology. Supreme Components International is an authorised distributor of GeneSiC Semiconductor components. This discrete semiconductor offers a breakdown voltage of 1200V and a typical on-resistance of just 20mOhm, enabling highly efficient power conversion. Silicon Carbide (SiC) MOSFETs offer superior switching performance, lower losses, and higher temperature operation compared to traditional silicon MOSFETs. The G3R20MT12K is well-suited for applications such as solar inverters, electric vehicle chargers, power factor correction (PFC) circuits, and high-frequency power supplies. Its robust design ensures reliable operation in demanding environments, making it a preferred choice for engineers seeking to optimize system performance and efficiency. Benefit from the enhanced thermal conductivity and reduced cooling requirements offered by SiC technology.

Product Tags

Technical Specifications

Attribute Description
Package Type TO-247-3
Technology Type Silicon Carbide MOSFET
Drain Source Voltage 1200 Volts
Continuous Drain Current 75 Amperes
Drain Source On Resistance 20 mOhm
This is a staging environment

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