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G3R20MT12K
Manufacturer GeneSiC Semiconductor
Short Description SiC MOSFET 1200V 20mOhm
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Packagetype
TO-247-3
Technologytype
Silicon Carbide MOSFET
Drainsourcevoltage
1200 Volts
Continuousdraincurrent
75 Amperes
Drainsourceonresistance
20 mOhm

Full Description

The G3R20MT12K SiC MOSFET, manufactured by GeneSiC Semiconductor, represents a significant advancement in power semiconductor technology. Supreme Components International is an authorised distributor of GeneSiC Semiconductor components. This discrete semiconductor offers a breakdown voltage of 1200V and a typical on-resistance of just 20mOhm, enabling highly efficient power conversion. Silicon Carbide (SiC) MOSFETs offer superior switching performance, lower losses, and higher temperature operation compared to traditional silicon MOSFETs. The G3R20MT12K is well-suited for applications such as solar inverters, electric vehicle chargers, power factor correction (PFC) circuits, and high-frequency power supplies. Its robust design ensures reliable operation in demanding environments, making it a preferred choice for engineers seeking to optimize system performance and efficiency. Benefit from the enhanced thermal conductivity and reduced cooling requirements offered by SiC technology.

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