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G3F75MT12K
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 75A SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Gate Charge
110 nanoCoulombs
Package Type
TO-247-2
Voltage Rating
1200 Volts
Forward Current Rating
75 Amperes
Typical Forward Voltage
1.6 Volts
Continuous Current Rating
75 Amperes
Maximum Junction Temperature
175 degrees Celsius

Full Description

The G3F75MT12K SiC Schottky Diode, manufactured by GeneSiC Semiconductor, represents a significant advancement in power electronics. This 1200V, 75A diode offers superior performance compared to traditional silicon diodes, thanks to its Silicon Carbide (SiC) material. Key advantages include near-zero reverse recovery current, temperature-independent switching behavior, and high surge current capability. These features contribute to reduced switching losses, increased efficiency, and improved system reliability. As an authorised distributor, Supreme Components International ensures you receive genuine GeneSiC components. Applications include power factor correction (PFC), motor drives, solar inverters, and high-frequency power supplies. The G3F75MT12K is designed for demanding applications where efficiency and reliability are paramount.

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