GeneSiC Semiconductor Logo
G3F75MT12J
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 75A SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Package Type
TO-247-2
Reverse Recovery Time
0 Nanoseconds
Forward Current Rating
75 Amperes
Maximum Voltage Rating
1200 Volts
Typical Forward Voltage
1.7 Volts
Continuous Current Rating
75 Amperes
Repetitive Peak Reverse Voltage
1200 Volts
Operating Junction Temperature Range
-55 to 175 Degrees Celsius
Forward Voltage At 25 Degrees Celsius
1.7 Volts

Ordering Information

Parameter
Value
Packaging Type
TUBE

Full Description

The G3F75MT12J SiC Schottky Diode, manufactured by GeneSiC Semiconductor, is a 1200V, 75A device designed for demanding power electronics applications. Supreme Components International is an authorised distributor of GeneSiC Semiconductor components. This diode features a Schottky barrier design, enabling fast switching speeds and negligible reverse recovery charge. This results in reduced switching losses and improved efficiency compared to traditional silicon diodes. The G3F75MT12J is ideal for use in power factor correction (PFC) circuits, motor drives, solar inverters, and other high-frequency power conversion systems. Its robust design ensures reliable operation in harsh environments. Benefit from superior performance and reliability with this advanced SiC Schottky diode.

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