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G3F65MT12K
Manufacturer GeneSiC Semiconductor
Short Description 650V, 12A SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Package Type
TO-252-2
Current Rating
12 Amperes
Voltage Rating
650 Volts
Typical Forward Voltage
1.45 Volts
Peak Forward Surge Current
100 Amperes
Maximum Junction Temperature
175 Degrees Celsius

Full Description

The G3F65MT12K SiC Schottky Diode, manufactured by GeneSiC Semiconductor, represents a significant advancement in power electronics. As an authorised distributor, Supreme Components International is proud to offer this high-performance component. This 650V, 12A diode features a Schottky barrier design, enabling exceptionally fast switching speeds and negligible reverse recovery charge. This results in reduced switching losses and improved overall system efficiency. The G3F65MT12K is well-suited for a wide range of applications, including power factor correction (PFC) circuits, solar inverters, electric vehicle chargers, and motor drives. Its robust design ensures reliable operation in demanding environments. Choose the G3F65MT12K for superior performance and efficiency in your power electronic designs.

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