Reference Only
G3F65MT12J
650V, 12 mOhm, SiC MOSFET
Datasheet
G3F65MT12J Datasheet
Product Description
The G3F65MT12J, manufactured by GeneSiC Semiconductor, is a cutting-edge 650V, 12 mOhm SiC MOSFET. Supreme Components International is an authorised distributor of GeneSiC Semiconductor components, ensuring you receive genuine and high-quality products. This discrete semiconductor offers significant advantages over traditional silicon MOSFETs, including lower switching losses, higher operating frequencies, and improved thermal performance. The G3F65MT12J is designed for applications such as power factor correction (PFC), solar inverters, electric vehicle (EV) chargers, and other high-power switching applications. Its superior characteristics enable higher efficiency, smaller form factors, and increased system reliability. Benefit from the enhanced performance and robustness of SiC technology with this advanced MOSFET.
Technical Specifications
| Attribute | Description |
|---|---|
| Package Type | TO-247-3 |
| Technology Type | Silicon Carbide MOSFET |
| Drain Source Voltage | 650 Volts |
| Continuous Drain Current | 75 Amperes |
| Drain Source On Resistance | 12 mOhm |