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G3F60MT06D
Manufacturer GeneSiC Semiconductor
Short Description 650V, 60A SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Technology
Silicon Carbide Schottky
Package Type
TO-247-2
Surge Current
250 Amperes
Current Rating
60 Amperes
Voltage Rating
650 Volts
Forward Current Rating
60 Amperes
Typical Forward Voltage
1.45 Volts
Maximum Junction Temperature
175 degrees Celsius
Repetitive Peak Reverse Voltage
650 Volts

Full Description

The G3F60MT06D, manufactured by GeneSiC Semiconductor, is a 650V, 60A Silicon Carbide (SiC) Schottky Diode. Supreme Components International is an authorised distributor of GeneSiC Semiconductor components. This SIC_SCHOTTKY_DIODE offers significant advantages over traditional silicon diodes, including faster switching speeds, lower reverse recovery current, and higher operating temperatures. These characteristics make it suitable for applications such as power factor correction (PFC), motor drives, and solar inverters. The G3F60MT06D enhances system efficiency and reduces overall power losses. Its robust design ensures reliable performance in demanding environments. Benefit from the superior performance of SiC technology with this diode.

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