GeneSiC Semiconductor Logo
G3F34MT12K
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 34A SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Charge
38 nanoCoulombs
Current
34 Amperes
Voltage
1200 Volts
Package Type
TO-247-2
Mounting Style
Through Hole
Forward Current Rating
34 Amperes
Typical Forward Voltage
1.6 Volts
Operating Temperature Range
-55 to 175 Degrees Celsius
Maximum Junction Temperature
175 Degrees Celsius
Repetitive Peak Reverse Voltage
1200 Volts

Full Description

The G3F34MT12K is a 1200V, 34A Silicon Carbide (SiC) Schottky Diode manufactured by GeneSiC Semiconductor. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, ensuring you receive genuine, high-quality components. This diode offers superior performance compared to traditional silicon diodes, including faster switching speeds, reduced reverse recovery losses, and higher operating temperatures. Its robust design and high surge current capability make it suitable for demanding applications such as power factor correction (PFC), motor drives, solar inverters, and other high-frequency power conversion systems. The G3F34MT12K's temperature-independent switching behavior ensures reliable operation across a wide range of operating conditions. Benefit from the efficiency and reliability of SiC technology with this GeneSiC Schottky diode.

This is a staging environment
×